共 50 条
- [1] ELECTRON-IRRADIATION AND ANNEALING OF GOLD-DOPED P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 249 - 250
- [4] EFFECT OF ELECTRON-IRRADIATION ON GOLD MIGRATION IN SILICON ZHURNAL TEKHNICHESKOI FIZIKI, 1979, 49 (11): : 2446 - 2447
- [5] ELECTRON-IRRADIATION AND ANNEALING OF A GE-SI ALLOY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1183 - 1184
- [6] ANNEALING AND LOW-TEMPERATURE ELECTRON-IRRADIATION OF GAAS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1974, (06): : 147 - 149
- [7] IMPLANTATION OF GOLD ATOMS INTO SILICON BY MEV ELECTRON-IRRADIATION MICROSCOPY MICROANALYSIS MICROSTRUCTURES, 1993, 4 (2-3): : 137 - 142
- [9] LOW-TEMPERATURE ELECTRON-IRRADIATION AND ANNEALING OF PURE CADMIUM BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 288 - 288