OBSERVATION OF SOLID-PHASE EPITAXY PROCESSES OF AR ION BOMBARDED SI(001) SURFACES BY SCANNING TUNNELING MICROSCOPY

被引：13

作者：

UESUGI, K ^{[1
]}

YAO, T ^{[1
]}

SATO, T ^{[1
]}

SUEYOSHI, T ^{[1
]}

IWATSUKI, M ^{[1
]}

机构：

[1] JEOL LTD,TOKYO 196,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 14期

关键词：

D O I：

10.1063/1.108598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy (STM) is used to investigate the surface morphology of Ar+-ion bombarded Si(001) surfaces and to elucidate the very beginning stages of solid phase epitaxy (SPE) processes of the Ar+-ion bombarded Si surfaces. The Ar+-ion bombarded Si surface consists of hillocks of 1-2 nn in diameter and 0.35-0.75 nm in height. The onset of SPE initiates at around 590-degrees-C, at which a temperature (2 X 2) structure surrounded by amorphous regions is partially observed on terraces of the surface. During annealing at 590-620-degrees-C, the areas of the (2 X 2) and c(4 X 4) reconstruction surrounded by amorphous regions develop. New defect models for the (2 X 2) and c (4 X 4) structures are proposed where alternating arrangements of the buckled dimers together with missing dimer defects are considered.

引用

页码：1600 / 1602

页数：3

共 11 条

[1] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].