ELECTRICAL AND MAGNETIC-PROPERTIES OF TANTALUM SILICON TELLURIDE AND ISOSTRUCTURAL COMPOUNDS

被引：18

作者：

BADDING, ME

GITZENDANNER, RL

ZIEBARTH, RP

DISALVO, FJ

机构：

[1] Department of Chemistry, Cornell University Ithaca

来源：

MATERIALS RESEARCH BULLETIN | 1994年 / 29卷 / 03期

基金：

美国国家科学基金会;

关键词：

TELLURIDES; INFINITE-CHAIN COMPOUNDS;

D O I：

10.1016/0025-5408(94)90030-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical resistivity, magnetic susceptibility, and lattice parameter measurements for the family of low-dimensional compounds, M4ZTe4 (M=Ta, Z=Si, Cr, Fe, Co, and Ni; M=Nb, Z=Si, Fe) are reported. The compounds with Z=Si are diamagnetic and the resistivity curves suggest two phase transitions, possibly due to charge density waves in these pseudo one-dimensional systems. For Z=Cr, Fe, Co, and Ni the compounds are paramagnetic metals with characteristics of typical intermetallic phases.

引用

页码：327 / 336

页数：10

共 13 条

[1] SYNTHESIS AND STRUCTURE OF TA4SITE4, A NEW LOW-DIMENSIONAL MATERIAL [J].