RECOMBINATION MECHANISMS IN 8-14-MU HGCDTE

被引：187

作者：

KINCH, MA ^{[1
]}

BRAU, MJ ^{[1
]}

SIMMONS, A ^{[1
]}

机构：

[1] TEXAS INSTR INC,DALLAS,TX 75222

来源：

关键词：

D O I：

10.1063/1.1662426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1649 / 1663

页数：15

共 24 条

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[3] AUGER EFFECT IN SEMICONDUCTORS
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[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29
[4] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION
BEATTIE, AR
SMITH, G
[J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &
[5] BEATTIE AR, 1962, J PHYS CHEM SOLIDS, V24, P1049
[6] BEBB HB, PRIVATE COMMUNICATIO
[7] Blakemore J.S., 1962, SEMICONDUCTOR STATIS
[8] BRAU MJ, TO BE PUBLISHED
[9] Brooks H., 1955, ADV ELECTRON, V7, P85
[10] BUSS DD, PRIVATE COMMUNICATIO