PHYSICS UNDERLYING THE PERFORMANCE OF BACK-SURFACE-FIELD SOLAR-CELLS

被引：51

作者：

FOSSUM, JG ^{[1
]}

NASBY, RD ^{[1
]}

PAO, SC ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 04期

关键词：

D O I：

10.1109/T-ED.1980.19937

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：785 / 791

页数：7

相关论文

共 18 条

[1] THEORETICAL EFFECTS OF SURFACE DIFFUSED REGION LIFETIME MODELS ON SILICON SOLAR-CELLS
DUNBAR, PM
HAUSER, JR
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (08) : 697 - 701
[2] DEPENDENCE OF OPEN-CIRCUIT VOLTAGE ON ILLUMINATION LEVEL IN P-N-JUNCTION SOLAR-CELLS
FOSSUM, JG
LINDHOLM, FA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 325 - 329
[3] PHYSICAL OPERATION OF BACK-SURFACE-FIELD SILICON SOLAR-CELLS
FOSSUM, JG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 322 - 325
[4] IMPORTANCE OF SURFACE RECOMBINATION AND ENERGY-BANDGAP NARROWING IN P-N-JUNCTION SILICON SOLAR-CELLS
FOSSUM, JG
LINDHOLM, FA
SHIBIB, MA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) : 1294 - 1298
[5] HIGH-EFFICIENCY P+-N-N+ BACK-SURFACE-FIELD SILICON SOLAR-CELLS
FOSSUM, JG
BURGESS, EL
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (03) : 238 - 240
[6] FOSSUM JG, 1978, 13TH IEEE PHOT SPEC
[7] GODLEWSKI MP, 1973, 10TH IEEE PHOT SPEC
[8] MINORITY-CARRIER REFLECTING PROPERTIES OF SEMICONDUCTOR HIGH-LOW JUNCTIONS
HAUSER, JR
DUNBAR, PM
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 715 - 716
[9] Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11
[10] JONSCHER AK, 1960, PRINCIPLES SEMICONDU