PHYSICS UNDERLYING THE PERFORMANCE OF BACK-SURFACE-FIELD SOLAR-CELLS

被引：51

作者：

FOSSUM, JG ^{[1
]}

NASBY, RD ^{[1
]}

PAO, SC ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 04期

关键词：

D O I：

10.1109/T-ED.1980.19937

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：785 / 791

页数：7

共 18 条

[1] THEORETICAL EFFECTS OF SURFACE DIFFUSED REGION LIFETIME MODELS ON SILICON SOLAR-CELLS [J].

DUNBAR, PM ;

HAUSER, JR .

SOLID-STATE ELECTRONICS, 1977, 20 (08) :697-701

[2] DEPENDENCE OF OPEN-CIRCUIT VOLTAGE ON ILLUMINATION LEVEL IN P-N-JUNCTION SOLAR-CELLS [J].

FOSSUM, JG ;

LINDHOLM, FA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :325-329

[3] PHYSICAL OPERATION OF BACK-SURFACE-FIELD SILICON SOLAR-CELLS [J].

FOSSUM, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :322-325

[4] IMPORTANCE OF SURFACE RECOMBINATION AND ENERGY-BANDGAP NARROWING IN P-N-JUNCTION SILICON SOLAR-CELLS [J].

FOSSUM, JG ;

LINDHOLM, FA ;

SHIBIB, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) :1294-1298

[5] HIGH-EFFICIENCY P+-N-N+ BACK-SURFACE-FIELD SILICON SOLAR-CELLS [J].

FOSSUM, JG ;

BURGESS, EL .

APPLIED PHYSICS LETTERS, 1978, 33 (03) :238-240

[6]

FOSSUM JG, 1978, 13TH IEEE PHOT SPEC

[7]

GODLEWSKI MP, 1973, 10TH IEEE PHOT SPEC

[8] MINORITY-CARRIER REFLECTING PROPERTIES OF SEMICONDUCTOR HIGH-LOW JUNCTIONS [J].

HAUSER, JR ;

DUNBAR, PM .

SOLID-STATE ELECTRONICS, 1975, 18 (7-8) :715-716

[9]

Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11

[10]

JONSCHER AK, 1960, PRINCIPLES SEMICONDU

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