SURFACE SCIENCE AT ATMOSPHERIC-PRESSURE - RECONSTRUCTIONS ON (001) GAAS IN ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：200

作者：

KAMIYA, I

ASPNES, DE

TANAKA, H

FLOREZ, LT

HARBISON, JP

BHAT, R

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.68.627

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first observation of reconstructions on semiconductor surfaces in atmospheric pressure (AP) environments. Using reflectance-difference spectroscopy we show that the primary reconstructions that occur on (001) GaAs in ultrahigh vacuum (UHV) also occur under AP H-2, He, and N2. These results demonstrate that dimer formation is not restricted to surfaces in UHV and justify the use of UHV studies to determine (001) GaAs chemistry during AP organometallic chemical vapor deposition (OMCVD). Reconstructions observed during OMCVD growth are inconsistent with previous models and provide new insights concerning growth.

引用

页码：627 / 630

页数：4

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