DEFECT MODELS IN ELECTRON-IRRADIATED N-TYPE GAAS

被引：28

作者：

ZIEBRO, B

HEMSKY, JW

LOOK, DC

机构：

[1] Department of Physics, Wright State University, Dayton

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.352098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

1 MeV electron irradiation has been performed in degenerate, n-type (n congruent-to 2 X 10(17) cm-3), molecular beam epitaxial GaAs layers, and Hall effect measurements have been carried out during the irradiation in order to get accurate defect production data. The results have been fitted with statistical models, and are most consistent with the usual E1 (E(C)-0.045 eV) and E2 (E(C)-0.15 eV) levels being the (-/0) and (0/+) transitions of the As vacancy, respectively. Also, an acceptor well below E(C)- 0. 15 eV is produced at a much higher rate than that of E1 and E2.

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页码：78 / 81

页数：4

相关论文

共 18 条

[1] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1986, 33 (10) :7346-7348

[2] RESPONSE OF GAAS DISPLACEMENT DAMAGE MONITORS TO PROTONS, ELECTRONS, AND GAMMA-RADIATION [J].

BARRY, AL ;

WOJCIK, R ;

MACDIARMID, AL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) :2400-2404

[3] MODELS FOR HEAVY DOPING EFFECTS IN GALLIUM-ARSENIDE [J].

BENNETT, HS ;

LOWNEY, JR .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :521-527

[4] NATIVE DEFECTS IN GALLIUM-ARSENIDE [J].

BOURGOIN, JC ;

VONBARDELEBEN, HJ ;

STIEVENARD, D .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :R65-R91

[5] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J].

CHANDRA, A ;

WOOD, CEC ;

WOODARD, DW ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1979, 22 (07) :645-650

[6]

Lang D. V., 1977, I PHYS C SER, V31, P70

[7]

Look D. C., 1989, ELECTRICAL CHARACTER

[8] THE DONOR NATURE OF THE MAIN ELECTRON TRAPS IN ELECTRON-IRRADIATED N-TYPE GAAS [J].

LOOK, DC .

SOLID STATE COMMUNICATIONS, 1987, 64 (05) :805-807

[9] DEFECT PRODUCTION IN ELECTRON-IRRADIATED, N-TYPE GAAS [J].

LOOK, DC ;

SIZELOVE, JR .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3660-3664

[10] EFFECTS OF A BUFFER LAYER ON FREE-CARRIER DEPLETION IN N-TYPE GAAS [J].

LOOK, DC ;

EVANS, KR ;

STUTZ, CE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) :1280-1284