MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)

被引:106
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BAN, VS
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10.1149/1.2408357
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O646 [电化学、电解、磁化学];
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081704 ;
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页码:1473 / &
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共 15 条
[1]   THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH [J].
BOUCHER, A ;
HOLLAN, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :932-&
[2]   COMPOSITIONAL INHOMOGENEITIES IN GAAS1-XPX ALLOY EPITAXIAL LAYERS [J].
EWING, RE ;
SMITH, DK .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) :5943-&
[3]   THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION [J].
FERGUSSON, RR ;
GABOR, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) :585-592
[4]   PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J].
FINCH, WF ;
MEHAL, EW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :814-817
[5]  
HURLE DTJ, 1968, P INT C CRYST GROWTH, P241
[7]  
MARINA LI, 1969, RUSS J PHYS CH USSR, V43, P963
[8]  
RICHMAN D, 1963, RCA REV, V4, P596
[9]   THERMODYNAMIC STUDY OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS IN AN OPEN TUBE [J].
SEKI, H ;
MORIYAMA, K ;
ASAKAWA, I ;
HORIE, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (11) :1324-&
[10]   EPITAXIAL GAAS KINETIC STUDIES - (001)ORIENTATION [J].
SHAW, DW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) :683-&