DIFFUSION OF SILICON IN PD2SI DURING GROWTH

被引：4
作者：
COMRIE, CM
EGAN, JM
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词：
D O I：
10.1116/1.576084
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
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页码：1492 / 1496
页数：5
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