DIFFUSION OF SILICON IN PD2SI DURING GROWTH

被引：4

作者：

COMRIE, CM

EGAN, JM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576084

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1492 / 1496

页数：5

共 12 条

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[10] MARKER STUDIES OF SILICIDE FORMATION, SILICON SELF-DIFFUSION AND SILICON EPITAXY USING RADIOACTIVE SILICON AND RUTHERFORD BACKSCATTERING [J].

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