X-RAY-DIFFRACTION OF STRAIN RELAXATION IN SI-SI1-XGEX HETEROSTRUCTURES

被引：22

作者：

BARIBEAU, JM

SONG, KC

MUNRO, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 04期

关键词：

D O I：

10.1063/1.100999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：323 / 325

页数：3

共 13 条

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[3]

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APPLIED PHYSICS LETTERS, 1986, 48 (01) :56-58

[6] DETERMINATION OF THE CRITICAL LAYER THICKNESS OF SI1-XGEX/SI HETEROSTRUCTURES BY DIRECT OBSERVATION OF MISFIT DISLOCATIONS [J].

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SEKI, M .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :380-382

[7]

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[8] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

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[9] DEPENDENCE OF CRITICAL THICKNESS ON GROWTH TEMPERATURE IN GEXSI1-X/SI SUPERLATTICES [J].

MILES, RH ;

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CHOW, PP ;

JOHNSON, DC ;

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APPLIED PHYSICS LETTERS, 1988, 52 (11) :916-918

[10] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :322-324

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