ION-IMPLANTED N-CHANNEL INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引：33
作者：
GLEASON, KR
DIETRICH, HB
HENRY, RL
COHEN, ED
BARK, ML
机构：
来源：
APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 09期
关键词：
D O I：
10.1063/1.90141
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：578 / 581
页数：4
相关论文
共 13 条
[1]   INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].
BARRERA, JS ;
ARCHER, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1023-1030
[2]  
DIETRICH HB, 1977, S P THIN FILM PHENOM
[3]  
DONNELLY JP, 1977, APPL PHYS LETT, V31, P419
[4]   BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J].
ENGELMANN, RWH ;
LIECHTI, CA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) :1288-1296
[5]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[6]  
HENRY RL, 1977, GALLIUM ARSENIDE REL, P28
[7]   EFFECT OF IONIZED IMPURITY SCATTERING ON ELECTRON TRANSIT-TIME IN GAAS AND INP FETS [J].
HILL, G ;
ROBSON, PN ;
MAJERFELD, A ;
FAWCETT, W .
ELECTRONICS LETTERS, 1977, 13 (08) :235-236
[8]  
HOOPER WW, 1977, IEEE INT ELECTRON DE, P601
[9]  
LEE RN, 1977, MATER RES BULL, V12, P651, DOI 10.1016/0025-5408(77)90075-7
[10]   FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS AT 300K AND 77K WITH TYPICAL ACTIVE-LAYER DOPING [J].
MALONEY, TJ ;
FREY, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (05) :519-519
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