ABSORPTION-EDGE EFFECTS ON TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENTS IN GAAS LASER-DIODES

被引：0

作者：

WINOGRADOFF, NN ^{[1
]}

SACILOTTI, MA ^{[1
]}

机构：

[1] UNICAMP,INST FIS GLEB WATAGHIN,13 100 CAMPINAS,SP,BRAZIL

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 22卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：489 / 492

页数：4

共 15 条

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[3]

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[5]

HWANG CF, TO BE PUBLISHED

[6]

KRESSEL H, 1970, AFALTR69357 WRIGHT P, P34

[7]

KRESSEL H, 1972, LASER HDB B, P456

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[9] DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/CM2 [J].

PANISH, MB ;

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SUMSKI, S .

APPLIED PHYSICS LETTERS, 1970, 16 (08) :326-&

[10]

PANKOVE JI, 1965, PHYS REV, V140, P2059

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