SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .1. GROWTH-KINETICS

被引：58

作者：

HITCHMAN, ML ^{[1
]}

KANE, J ^{[1
]}

机构：

[1] RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND

来源：

关键词：

D O I：

10.1016/0022-0248(81)90106-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：485 / 500

页数：16

共 30 条

[1]

[Anonymous], 1966, PROPERTIES GASES LIQ

[2]

[Anonymous], COMMUNICATION

[3]

Boudart M., 1968, KINETICS CHEM PROCES

[4]

CLARK A, 1970, THEORY ADSORPTION CA

[5] The mechanism of catalytic decomposition [J].

Constable, FH .

[6]

DAINTON FS, 1966, CHAIN REACTIONS INTR

FARROW, RFC .

[8]

Frost A.A., 1971, KINETICS MECH, P7

[9]

GOODMAN AM, 1978, 14TH P INT C PHYS SE, P805

HAMASAKI, M ;

ADACHI, T ;

WAKAYAMA, S ;

KIKUCHI, M .