UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN

被引：73

|

作者：

BATDORF, RL

CHYNOWETH, AG

DACEY, GC

FOY, PW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1960年 / 31卷 / 07期

关键词：

D O I：

10.1063/1.1735794

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1153 / 1160

页数：8

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