IMPROVED N-CONTACT AND P-CONTACT IN INP/INGAAS JUNCTION FIELD-EFFECT TRANSISTORS AND PIN PHOTODIODES FOR OPTOELECTRONIC INTEGRATION

被引：0
|
作者：
LAUTERBACH, C
ROMER, D
HOFFMANN, L
WALTER, JW
MULLER, J
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Contact resistances of an InP/InGaAs junction held-effect transistor and a pin photodiode have been improved by local n doping via Si ion implantation and implementing an InGaAs p contact layer. AuGe/Au contacts have a contact resistivity R(t) of 0.015 Omega mm on 1*10(18)cm(-3) n-doped InP after annealing at 400 degrees C. The Ti/Au metallization shows an ohmic behaviour (R(t)=0.09 Omega mm) on 2*10(19) cm(-3) p-doped InGaAs. JFETs with improved contacts show a significant reduction in power dissipation and in the spectral noise density at frequencies below 100 MHz.
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页码：455 / 460
页数：6
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