INVESTIGATIONS OF MIS STRUCTURE INHOMOGENEITIES USING A SCANNING MERCURY PROBE

被引：18

作者：

NAKHMANS.RS ^{[1
]}

DOBROVOL.PP ^{[1
]}

机构：

[1] ACAD SCI USSR, INST SEMICOND PHYS, SIBIRIAN BRANCH, NOVOSIBIRSK, USSR

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 19卷 / 01期

关键词：

D O I：

10.1002/pssa.2210190122

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：225 / 241

页数：17

共 19 条

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[5] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J].

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[7] IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J].

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[8] FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON [J].

LEHOVEC, K ;

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[9]

MAKHMANSON RS, 1965, FIZ TVERD TELA, V7, P3439

[10]

MAKHMANSON RS, 1964, FIZ TVERD TELA, V6, P1115

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