PARTICLE GENERATION AND FILM FORMATION IN AN ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR USING THE TETRAETHYLORTHOSILICATE (TEOS)/HE, TEOS/O2/HE, AND TEOS/O3/HE SYSTEMS

被引：26

作者：

ADACHI, M

OKUYAMA, K

TOHGE, N

SHIMADA, M

SATO, J

MUROYAMA, M

机构：

[1] HIROSHIMA UNIV,DEPT CHEM ENGN,HIGASHIHIROSHIMA,HIROSHIMA 724,JAPAN

[2] SONY CORP,ULSI RES & DEV GRP,DEPT PROC TECHNOL,ASAHI,KANAGAWA 243,JAPAN

[3] KINKI UNIV,DEPT MET,OSAKA,OSAKA 577,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 5B期

关键词：

TEOS; TETRAETHYLORTHOSILICATE; ATMOSPHERIC-PRESSURE CVD; TEOS-APCVD; TEOS/O2-APCVD; TEOS/O3-APCVD; FILM FORMATION; SILICON DIOXIDE FILM; GAS-PHASE NUCLEATION; PARTICLE GENERATION;

D O I：

10.1143/JJAP.32.L748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Film formation on a substrate and particle generation in the gas phase were examined simultaneously in an atmospheric-pressure chemical vapor deposition (CVD) reactor using tetraethylorthosilicate(TEOS)/O3/He, TEOS/O2/He and TEOS/He systems. Particle generation in these systems began at furnace temperatures Tf of 60, 340 and 740-degrees-C, respectively. Film formation began at T(f) = 100, 600 and 700-degrees-C, respectively. For the TEOS/O3/He system, an exponential reduction in the film growth rate for T(f) greater-than-or-equal-to 300-degrees-C was found to be induced by a decrease in the ozone concentration due to thermal decomposition.

引用

页码：L748 / L751

页数：4

共 10 条

[1] GAS-PHASE NUCLEATION IN AN ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION PROCESS FOR SIO2-FILMS USING TETRAETHYLORTHOSILICATE (TEOS) [J].