HETEROEPITAXIAL OXIDIC CONDUCTOR LA1-XSRXCOO3 PREPARED BY PULSED-LASER DEPOSITION

La1-xSrxCoO3 films have been grown highly textured on Si/SiO2(100) and epitaxially on MgO(100) substrates, despite the large lattice mismatch. This is confirmed by XRD pole figures and HR-TEM analyses: misfit corrections are observed in the first atomic layers. Electrical and structural analyses are discussed and show that La1-xSrxCoO3 is a promising electrode material, providing a thermally stable and electrically intimate contact with oxidic active layers. Dielectric and ferro-electric materials sandwiched between these oxidic electrodes showed sharp interfaces and excellent electrical properties.