SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：129
作者：
BEAN, JC
POATE, JM
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 07期
关键词：
D O I：
10.1063/1.92007
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：643 / 646
页数：4
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