DX CENTERS IN ALAS AND GAAS-ALAS SELECTIVELY DOPED SUPERLATTICES

被引：0

作者：

ABABOU, S ^{[1
]}

MARCHAND, JJ ^{[1
]}

MAYET, L ^{[1
]}

GUILLOT, G ^{[1
]}

MOLLOT, F ^{[1
]}

机构：

[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92220 BAGNEUX,FRANCE

来源：

JOURNAL DE PHYSIQUE III | 1991年 / 1卷 / 07期

关键词：

TRANSIENT CAPACITANCE MEASUREMENTS; ELECTRICAL CHARACTERIZATION; CAPTURE BARRIER; DONOR; LEVEL; ALXGA1-XAS; ALGAAS; GAALAS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

DX centers have been investigated using deep level transient spectroscopy (DLTS) in Si doped AlAs and in the selectively doped GaAs-AlAs superlattices (SLs) grown by molecular beam epitaxy. The activation energy for thermal emission is E(a) = 0.42 eV in both the SLs and AlAs layers. For the first time a study of the capture in a SL reveals a capture activation energy E(cap) = 0.36 eV, which locates the DX at E(t) almost-equal-to 60 meV below the conduction miniband. Taking into account the measured energies and trap concentrations, we show that the DX observed in the SLs lies in the AlAs layers.

引用

页码：1301 / 1309

页数：9