LOCAL-DISTRIBUTION OF DEEP CENTERS IN GAP STUDIED BY INFRARED CATHODOLUMINESCENCE

被引：0
作者：
DOMINGUEZADAME, F
PIQUERAS, J
FERNANDEZ, P
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来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期
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O59 [应用物理学];
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摘要：
Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image.
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页码：257 / 259
页数：3
相关论文
共 9 条
  • [1] CHINO K, 1988, SEMI-INSULATING III-V MATERIALS, MALMO 1988, P133
  • [2] INFLUENCE OF VACANCY DEFECTS ON THE LUMINESCENCE OF GAP STUDIED BY CL AND POSITRONS
    DOMINGUEZADAME, F
    PIQUERAS, J
    DEDIEGO, N
    MOSER, P
    [J]. SOLID STATE COMMUNICATIONS, 1988, 67 (06) : 665 - 667
  • [3] COMPOSITE CHARACTER OF THE RED BAND EMISSION IN LEC GAP-S
    DOMINGUEZADAME, F
    PIQUERAS, J
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 1989, 21 (05) : 539 - 542
  • [4] SPATIAL-DISTRIBUTION OF VACANCY DEFECTS IN GAP WAFERS
    DOMINGUEZADAME, F
    PIQUERAS, J
    DEDIEGO, N
    LLOPIS, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2583 - 2585
  • [5] DEEP ACCEPTOR-LIKE RECOMBINATION CENTERS IN BULK LIQUID ENCAPSULATED CZOCHRALSKI GAP, STUDIED WITH OPTICALLY DETECTED MAGNETIC-RESONANCE
    GODLEWSKI, M
    MONEMAR, B
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) : 200 - 206
  • [6] ODMR INVESTIGATION OF THE PGA ANTISITE DEFECT IN GAP
    KILLORAN, N
    CAVENETT, BC
    GODLEWSKI, M
    KENNEDY, TA
    WILSEY, ND
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (22): : L723 - L728
  • [7] PEAKER AR, 1977, I PHYS C SERIES A, V33, P326
  • [8] IDENTIFICATION OF ASGA ANTISITES IN PLASTICALLY DEFORMED GAAS
    WEBER, ER
    ENNEN, H
    KAUFMANN, U
    WINDSCHEIF, J
    SCHNEIDER, J
    WOSINSKI, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6140 - 6143
  • [9] EFFECTS OF STOICHIOMETRY ON DEEP LEVELS IN MOVPE GAP
    YANG, XZ
    SAMUELSON, L
    GRIMMEISS, HG
    OMLING, P
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (05) : 488 - 493
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