LIGHT-INDUCED ESR IN AMORPHOUS SILICON

被引：14

作者：

FRIEDERICH, A

KAPLAN, D

机构：

[1] Laboratoire Central de Recherches, Thomson-C.S.F., Orsay

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 02期

关键词：

hydrogen; lightinduced E.S.R; model defects; silicon;

D O I：

10.1007/BF02663264

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model for defects in hydrogenated amorphous silicon (TS > 150‡C) observed by light-induced E.S.R. is presented. It is based on a comparison with E.S.R. signals observed from irradiation defects in crystalline silicon. The magnitude of the E.S.R. signal as a function of hydrogen concentration is also discussed. © 1979 AIME.

引用

页码：79 / 85

页数：7

共 6 条

[1]

BOURDON B, UNPUBLISHED

[2] HYDROGENATION OF EVAPORATED AMORPHOUS SILICON FILMS BY PLASMA TREATMENT [J].