LIGHT-INDUCED ESR IN AMORPHOUS SILICON

被引：14
作者：
FRIEDERICH, A
KAPLAN, D
机构：
[1] Laboratoire Central de Recherches, Thomson-C.S.F., Orsay
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 02期
关键词：
hydrogen; lightinduced E.S.R; model defects; silicon;
D O I：
10.1007/BF02663264
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A model for defects in hydrogenated amorphous silicon (TS > 150‡C) observed by light-induced E.S.R. is presented. It is based on a comparison with E.S.R. signals observed from irradiation defects in crystalline silicon. The magnitude of the E.S.R. signal as a function of hydrogen concentration is also discussed. © 1979 AIME.
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页码：79 / 85
页数：7
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    KAPLAN, D
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    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 440 - 442
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    [J]. PHYSICAL REVIEW B, 1973, 8 (06): : 2810 - 2826
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