ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON

被引：0

作者：

KAZANSKII, AG ^{[1
]}

MAO, Y ^{[1
]}

KONG, GL ^{[1
]}

机构：

[1] MOSCOW MV LOMONOSOV STATE UNIV,DEPT PHYS,119899 MOSCOW,RUSSIA

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 91卷 / 06期

关键词：

D O I：

10.1016/0038-1098(94)90783-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of pulsed bias light excitation on the absorption in the defect region of undoped a-Si:H film has been investigated. Ac constant photocurrent method has been used to measure the absorption spectrum. The absorption in the defect region increases with the light pulse duration.The analysis of obtained results does not support the existence of a long time relaxation process of dangling-bond states in a-Si:H.

引用

页码：447 / 449

页数：3

共 10 条

[1] BALAGUROV LA, 1987, SOV PHYS SEMICOND+, V21, P987
[2] DANGLING-BOND RELAXATION AND DEEP-LEVEL MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON
BRANZ, HM
SCHIFF, EA
[J]. PHYSICAL REVIEW B, 1993, 48 (12): : 8667 - 8671
[3] DANGLING BONDS IN DOPED AMORPHOUS-SILICON - EQUILIBRIUM, RELAXATION, AND TRANSITION ENERGIES
BRANZ, HM
[J]. PHYSICAL REVIEW B, 1989, 39 (08): : 5107 - 5115
[4] OBSERVATION OF A NOVEL RELAXATION PROCESS ASSOCIATED WITH ELECTRONIC-TRANSITIONS FROM DEEP (D) DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
COHEN, JD
LEEN, TM
RASMUSSEN, RJ
[J]. PHYSICAL REVIEW LETTERS, 1992, 69 (23) : 3358 - 3361
[5] CHARGE REDISTRIBUTION PROCESS ON GAP STATES IN HYDROGENATED AMORPHOUS-SILICON
FARMER, JW
SU, Z
[J]. PHYSICAL REVIEW LETTERS, 1993, 71 (18) : 2979 - 2982
[6] OPTICAL-BIAS EFFECTS IN ELECTRON-DRIFT MEASUREMENTS AND DEFECT RELAXATION IN A-SIH
HAN, DX
MELCHER, DC
SCHIFF, EA
SILVER, M
[J]. PHYSICAL REVIEW B, 1993, 48 (12): : 8658 - 8666
[7] KAZANSKII AG, 1985, SOV PHYS SEMICOND+, V19, P323
[8] A CRITICAL INVESTIGATION OF A-SI-H PHOTOCONDUCTIVITY GENERATED BY SUBGAP ABSORPTION OF LIGHT
LEE, S
KUMAR, S
WRONSKI, CR
MALEY, N
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 316 - 318
[9] OBSERVATION OF CONFIGURATION SWITCHING OF THE D-CENTER IN A-SI-H
LEEN, TM
COHEN, JD
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 319 - 322
[10] DENSITY OF THE GAP STATES IN UNDOPED AND DOPED GLOW-DISCHARGE A-SI-H
VANECEK, M
KOCKA, J
STUCHLIK, J
KOZISEK, Z
STIKA, O
TRISKA, A
[J]. SOLAR ENERGY MATERIALS, 1983, 8 (04): : 411 - 423

← 1 →