MICROWAVE AVALANCHE DIODES

被引：92

作者：

SZE, SM

RYDER, RM

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1971年 / 59卷 / 08期

关键词：

D O I：

10.1109/PROC.1971.8360

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1140 / +

页数：1

共 86 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[2] BARTELINK DJ, 1969, APPL PHYS LETT
[3] APPROXIMATE LARGE-SIGNAL ANALYSIS OF IMPATT OSCILLATORS
BLUE, JL
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1969, 48 (02): : 383 - +
[4] BLUE JL, 1970, JUN IEEE DEV RES C S
[5] FREQUENCY SCALING OF IMPATT DIODES
BLUM, FA
KRAMER, NB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (11) : 983 - +
[6] PULSE-DRIVEN SILICON P-N JUNCTION AVALANCHE OSCILLATORS FOR 0.9 TO 20 MM BAND
BOWMAN, LS
BURRUS, CA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (08) : 411 - +
[7] CARROLL JE, 1970, HOT ELECTRON MICROWA, pCH8
[8] A POOR MANS TRAPATT OSCILLATOR
CHAFFIN, RJ
EERNISSE, EP
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (01): : 173 - &
[9] CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS
CHANG, CY
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 727 - +
[10] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GAAS
CHANG, YJ
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5392 - &