DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN

被引：93

作者：

GRAFF, K ^{[1
]}

GRALLATH, E ^{[1
]}

ADES, S ^{[1
]}

GOLDBACH, G ^{[1
]}

TOLG, G ^{[1
]}

机构：

[1] AEG TELEFUNKEN, HEILBRONN, WEST GERMANY

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 08期

关键词：

D O I：

10.1016/0038-1101(73)90095-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：887 / 893

页数：7

共 31 条

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[2]

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NEWMAN, RC ;

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[6]

ENGELMANN C, 1970, RADIOCHEM RADIOANAL, V5, P319

[7] REACTIONS OF GROUP-III ACCEPTORS WITH OXYGEN IN SILICON CRYSTALS [J].

FULLER, CS ;

DOLEIDEN, FH ;

WOLFSTIRN, K .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (3-4) :187-203

[8]

GIROUX J, 1971, B SOC CHIM FR, P706

[9]

GRIFFIN JM, 1968, AERER5878 REP

[10]

GROSS C, 1969, J ELECTROCHEM SOC, V116, pC248

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