HEAVY-METAL GETTERING IN SILICON-DEVICE PROCESSING

被引：52

作者：

BALDI, L

CEROFOLINI, G

FERLA, G

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 01期

关键词：

D O I：

10.1149/1.2129609

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：164 / 169

页数：6

共 21 条

[1] SIP PRECIPITATION WITHIN DOPED SILICON LATTICE, CONCOMITANT WITH PHOSPHORUS PREDEPOSITION [J].

ARMIGLIATO, A ;

NOBILI, D ;

SERVIDORI, M ;

SOLMI, S .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5489-5491

[2] GOLD SOLUBILITY IN SILICON AND GETTERING BY PHOSPHORUS [J].

BALDI, L ;

CEROFOLINI, GF ;

FERLA, G ;

FRIGERIO, G .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1978, 48 (02) :523-532

[3] ROLE OF POINT-LIKE AND EXTENDED DEFECTS IN MOS PROCESSING [J].

BALDI, L ;

CEROFOLINI, G ;

FERLA, G .

SURFACE TECHNOLOGY, 1979, 8 (02) :161-170

[4] DETERMINATION OF SURFACE-GENERATION AND BULK-GENERATION CURRENTS IN LOW-LEAKAGE SILICON MOS STRUCTURES [J].

BROTHERTON, SD ;

GILL, A .

APPLIED PHYSICS LETTERS, 1978, 33 (10) :890-892

[5] THIN-FILMS IN RESTRICTED GEOMETRIES [J].

CEROFOLINI, GF ;

FERLA, G ;

ROVERE, C .

THIN SOLID FILMS, 1978, 50 (MAY) :73-80

[6] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

GOETZBERGER, A ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824

[7] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[8] EFFECTS OF TRICHLOROETHYLENE ADDITION ON THERMAL-OXIDATION OF SILICON AT 1200-DEGREES-C [J].

HATTORI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (01) :69-72

[9]

HERMANN H, 1975, FESTKORPERPROBLEME, V15, P279

[10]

HERRING RB, 1976, 18TH ANN EL MAT C

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