MICROSCOPIC IDENTIFICATION AND ELECTRONIC-STRUCTURE OF A DI-HYDROGEN VACANCY COMPLEX IN SILICON BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE

We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine interactions the defect is identified as a di-hydrogen vacancy complex, where the H atoms passivate two of the four dangling bonds in a monovacancy. A spin-triplet is the lowest electronic excited state of the defect, which exhibits a strong recombination channel for the free-carriers. © 1990 The American Physical Society.