2-ELECTRON CONDUCTION IN N-TYPE HG1-XCDXTE

被引：41

作者：

FINKMAN, E

NEMIROVSKY, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1052 / 1058

页数：7

共 27 条

[1]

ANCKERJOHNSON B, 1970, P C PHYSICS SEMIMETA

[2]

BLATT FJ, 1968, PHYSICS ELECTRONIC C

[3]

DORNHAUS R, 1974, SOLID STATE COMMUN, V15, P496

[4] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].

EHRENREICH, H .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2155-&

[5] ELECTRICAL TRANSPORT PROPERTIES OF SEMICONDUCTING CDXHG1-XTE ALLOYS [J].

ELLIOTT, CT ;

SPAIN, IL .

SOLID STATE COMMUNICATIONS, 1970, 8 (24) :2063-&

[6]

ELLIOTT CT, 1971, J PHYS D, V4, P705

[7] PRESSURE-TEMPERATURE PHASE-DIAGRAMS OF HGTE AND HG1-XCDXTE SYSTEMS [J].

FARRAR, RA ;

GILLHAM, CJ ;

BARTLETT, B ;

QUELCH, M .

JOURNAL OF MATERIALS SCIENCE, 1977, 12 (04) :836-838

[8]

Harman T. C., 1972, J ELECTRON MATER, V1, P230

[9] GALVANO-THERMOMAGNETIC EFFECTS IN SEMICONDUCTORS AND SEMIMETALS .3. STANDARD AND KANE BAND MODELS [J].

HARMAN, TC ;

HONIG, JM ;

TARMY, BM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (07) :835-&

[10]

KANE EO, 1966, SEMICONDUCTORS SEMIM, V1

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