ELECTRODE MODIFICATION BY THE SOL-GEL METHOD

被引：68

作者：

DVORAK, O ^{[1
]}

DEARMOND, MK ^{[1
]}

机构：

[1] NEW MEXICO STATE UNIV,DEPT CHEM,LAS CRUCES,NM 88003

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1993年 / 97卷 / 11期

关键词：

D O I：

10.1021/j100113a028

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silica gel films prepared by the sol-gel route were used to modify platinum and transparent indium oxide electrodes. The silicon dioxide layer reduces electron transfer to the electrode but, due to the porous structure of the silica gel, does not completely prevent it. The tris(2,2'-bipyridyl)ruthenium(II) cation is incorporated into the gel layer, and the cation retains electrochemical and photoelectrochemical activity. The comparison of electrochemical and photochemical data was used to evaluate attachment of the ruthenium complex to the silica gel matrix.

引用

页码：2646 / 2648

页数：3

共 29 条

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[2]

ARLON JH, 1988, MAT RES SOC S P, V121, P679

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