DONOR WAVEFUNCTIONS IN SILICON BY THE ENDOR TECHNIQUE

被引：21
作者：
FEHER, G
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1959年 / 8卷
关键词：
D O I：
10.1016/0022-3697(59)90396-8
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：486 / 489
页数：4
相关论文
共 9 条
[1]   OBSERVATION OF NUCLEAR MAGNETIC RESONANCES VIA THE ELECTRON SPIN RESONANCE LINE [J].
FEHER, G .
PHYSICAL REVIEW, 1956, 103 (03) :834-835
[2]  
FEHER G, UNPUBLISHED
[3]  
FLETCHER, 1954, PHYS REV, V95, P844
[4]   SPIN RESONANCE OF DONORS IN SILICON [J].
FLETCHER, RC ;
YAGER, WA ;
PEARSON, GL ;
HOLDEN, AN ;
READ, WT ;
MERRITT, FR .
PHYSICAL REVIEW, 1954, 94 (05) :1392-1393
[5]  
HAYNES JR, 1958, B AM PHYS SOC 2, V3, P31
[6]   THEORY OF DONOR LEVELS IN SILICON [J].
KOHN, W .
PHYSICAL REVIEW, 1955, 97 (06) :1721-1721
[7]   THEORY OF DONOR STATES IN SILICON [J].
KOHN, W ;
LUTTINGER, JM .
PHYSICAL REVIEW, 1955, 98 (04) :915-922
[8]   ELECTRONIC STRUCTURE OF F-CENTERS - SATURATION OF THE ELECTRON SPIN RESONANCE [J].
PORTIS, AM .
PHYSICAL REVIEW, 1953, 91 (05) :1071-1078
[9]  
SCHECHTER D, COMMUNICATION
1