TEM STUDY OF ION-IMPLANTED GAAS AFTER PULSED ELECTRON-BEAM ANNEALING

被引：0
|
作者：
GAIGHER, HL
ALBERTS, HW
机构：
[1] Department of Physics, University of Pretoria
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1993年 / 125卷 / 04期
关键词：
PULSED ELECTRON BEAM ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; GAAS;
D O I：
10.1080/10420159308220214
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
(001) GaAs single crystals were implanted with 150 keV Cr+ ions using a dose of 5 x 10(15) ions cm-2 The amorphized surface layers were subjected to pulsed electron beam annealing at energy densities in the range 0-1.3 J cm-2. A detailed TEM investigation of the damaged and annealed surface layer was conducted. These observations were correlated with backscattering results.
引用
收藏
页码：373 / 380
页数：8
相关论文
共 50 条
  • [31] ANNEALING OF EXPANSION IN ION-IMPLANTED GAAS
    HANAZAWA, T
    YAMAGUCH.J
    GAMO, K
    ITOH, N
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (09) : 1487 - 1488
  • [32] CAPLESS ANNEALING OF ION-IMPLANTED GAAS
    SIU, DP
    IMMORLICA, AA
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 722 - 722
  • [33] LASER ANNEALING OF ION-IMPLANTED GAAS
    SEALY, BJ
    KULAR, SS
    STEPHENS, KG
    SADANA, D
    BOOKER, GR
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 121 - 124
  • [34] CAPLESS ANNEALING OF ION-IMPLANTED GAAS
    IMMORLICA, AA
    EISEN, FH
    APPLIED PHYSICS LETTERS, 1976, 29 (02) : 94 - 95
  • [35] CAPLESS ANNEALING OF ION-IMPLANTED GAAS
    IMMORLICA, AA
    EISEN, FH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (11) : 1259 - 1260
  • [36] ANNEALING CHARACTERISTICS OF BE ION-IMPLANTED GAAS
    NOJIMA, S
    KAWASAKI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) : 1845 - 1850
  • [37] PULSED ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON
    INADA, T
    SUGIYAMA, T
    OKANO, N
    ISHIKAWA, Y
    ELECTRONICS LETTERS, 1980, 16 (02) : 54 - 55
  • [38] MULTIPLY SCANNED ELECTRON-BEAM ANNEALING OF SI IMPLANTED GAAS
    BUJATTI, M
    CETRONIO, A
    NIPOTI, R
    OLZI, E
    APPLIED PHYSICS LETTERS, 1982, 40 (04) : 334 - 336
  • [39] PULSED ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON
    YAMAMOTO, Y
    INADA, T
    SUGIYAMA, T
    TAMURA, S
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 276 - 283
  • [40] IN-SITU DETECTION OF REARRANGEMENT PROCESSES DURING ELECTRON-BEAM ANNEALING OF ION-IMPLANTED INP
    MAURER, C
    KALLWEIT, R
    BAUMANN, H
    BETHGE, K
    KRIMMEL, EF
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 564 - 568
12345