THICKNESS DEPENDENCE OF THE PHOTOCONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：38
作者：
SOLOMON, I [1 ]
BRODSKY, MH [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 08期
关键词：
D O I：
10.1063/1.328400
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：4548 / 4549
页数：2
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