RECENT PROGRESS IN MNOS MEMORY TECHNOLOGY

被引：1
|
作者：
KENDALL, JT [1 ]
机构：
[1] NATL CASH REGISTER CO,DAYTON,OH 45342
来源：
MICROELECTRONICS AND RELIABILITY | 1974年 / 13卷 / 05期
关键词：
D O I：
10.1016/0026-2714(74)90464-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：413 / 414
页数：2
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