TEM STUDY OF THE STRUCTURE AND CHEMISTRY OF A DIAMOND SILICON INTERFACE

被引：23

作者：

TZOU, Y ^{[1
]}

BRULEY, J ^{[1
]}

ERNST, F ^{[1
]}

RUHLE, M ^{[1
]}

RAJ, R ^{[1
]}

机构：

[1] MAX PLANCK INST MET RES,INST WERKSTOFFWISSENSCH,D-70174 STUTTGART,GERMANY

来源：

JOURNAL OF MATERIALS RESEARCH | 1994年 / 9卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.1994.1566

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interface between diamond and silicon, fabricated by growing diamond films on (001) silicon by microwave plasma assisted chemical vapor deposition (MPACVD), was characterized by high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Two types of interface morphology were identified. Type A interfaces contain an amorphous transition layer composed of silicon, carbon, and oxygen; the diamond overgrowth on this layer consists of nanocrystalline grains with random orientations. Type B interfaces consist of large diamond grains having special orientations with respect to the silicon substrate, without an obvious presence of a glassy phase and with a much lower oxygen content than type A interfaces.

引用

页码：1566 / 1572

页数：7

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