THE NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .3. THE SIH4-HCL-H2 SYSTEM AT LOW-TEMPERATURES

被引：33
作者：
CLAASSEN, WAP
BLOEM, J
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 06期
关键词：
D O I：
10.1149/1.2127635
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：1353 / 1359
页数：7
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