RESISTIVITY AND OXIDATION OF TUNGSTEN SILICIDE THIN-FILMS

被引：21

作者：

MILLER, RJ

机构：

来源：

THIN SOLID FILMS | 1980年 / 72卷 / 03期

关键词：

D O I：

10.1016/0040-6090(80)90526-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：427 / 432

页数：6

共 12 条

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[3]

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[6] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J].

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[7] KINETICS OF THE THERMAL-OXIDATION OF WSI2 [J].

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MEINDL, JD .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :529-531

[8]

MOHAMMADI F, 1979, 1979 EL SOC M PRINC, P392

[9] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

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FRASER, DB .

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[10]

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