PROJECTION ELECTRON-BEAM LITHOGRAPHY - A NEW APPROACH

被引：93

作者：

BERGER, SD ^{[1
]}

GIBSON, JM ^{[1
]}

CAMARDA, RM ^{[1
]}

FARROW, RC ^{[1
]}

HUGGINS, HA ^{[1
]}

KRAUS, JS ^{[1
]}

LIDDLE, JA ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 06期

关键词：

D O I：

10.1116/1.585356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Projection electron-beam lithography is potentially one of the most attractive techniques available. It offers high resolution, high throughput, and good overlay and registration characteristics. In this paper we discuss some new approaches which seem to offer solutions to problems associated with earlier systems.

引用

页码：2996 / 2999

页数：4

共 14 条

[1] 1-4 DEMAGNIFYING ELECTRON PROJECTION SYSTEM [J].

ASAI, T ;

ITO, S ;

ETO, T ;

MIGITAKA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :47-50

[2] NEW APPROACH TO PROJECTION-ELECTRON LITHOGRAPHY WITH DEMONSTRATED 0.1 MU-M LINEWIDTH [J].

BERGER, SD ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1990, 57 (02) :153-155

[3]

BERGER SD, 1990, NANOSTRUCTURES PH EA, V26, P37

[4]

BOERSCH H, 1959, NATURWISSENSCHAFTEN, V46, P596

[5]

BOHLEN H, 1984, SOLID STATE TECH SEP, P210

[6]

Broers A. N., 1989, Nanostructure Physics and Fabrication. Proceedings of the International Symposium, P421

[7] ALIGNMENT AND REGISTRATION SCHEMES FOR PROJECTION ELECTRON LITHOGRAPHY [J].

FARROW, RC ;

BERGER, SD ;

GIBSON, JM ;

LIDDLE, JA ;

KRAUS, JS ;

CAMARDA, RM ;

HUGGINS, HA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :3582-3585

[8] ALIGNED MULTILAYER STRUCTURE GENERATION BY ELECTRON MICRO-PROJECTION [J].

FROSIEN, J ;

LISCHKE, B ;

ANGER, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1827-1829

[9] ELECTRON-PROJECTION MICROFABRICATION SYSTEM [J].

HERITAGE, MB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1135-1145

[10]

KOOPS HWP, 1984, SPRINGE SERIES OPTIC, V43

← 1 2 →