ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC

被引:57
作者
COOPER, CB
LUDOWISE, MJ
AEBI, V
MOON, RL
机构
关键词
D O I
10.1007/BF02670851
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:299 / 309
页数:11
相关论文
共 37 条
[1]   INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE [J].
BACHMANN, KJ ;
SHAY, JL .
APPLIED PHYSICS LETTERS, 1978, 32 (07) :446-448
[2]   GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE [J].
BALIGA, BJ ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :683-687
[3]  
BALIGA BJ, 1974, THESIS RENSSELEAR PO
[4]   DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J].
BASS, SJ .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :172-178
[5]   TRIMETHYLGALLIUM .V. REACTIONS OF TRIMETHYL-ALUMINIUM -GALLIUM AND -INDIUM WITH SOME PRIMARY AND SECONDARY PHOSPHINES AND ARSINES [J].
BEACHLEY, OT ;
COATES, GE .
JOURNAL OF THE CHEMICAL SOCIETY, 1965, (MAY) :3241-&
[6]   BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY [J].
CHO, AY ;
CASEY, HC ;
FOY, PW .
APPLIED PHYSICS LETTERS, 1977, 30 (08) :397-399
[7]  
CLOUGH RB, 1969, T METALL SOC AIME, V245, P583
[9]  
COATES GE, 1967, ORGANOMETALLIC COMPO, V1
[10]  
COOPER C, UNPUBLISHED