A JFET-CMOS RADIATION-TOLERANT CHARGE-SENSITIVE PREAMPLIFIER

被引：7
|
作者：
BUTTLER, W
HOSTICKA, BJ
LUTZ, G
MANFREDI, PF
机构：
[1] MAX PLANCK INST PHYS & ASTROPHYS,W-8000 MUNICH 40,GERMANY
[2] UNIV PAVIA,DIPARTIMENTO ELETTRON,I-27100 PAVIA,ITALY
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1990年 / 25卷 / 04期
关键词：
D O I：
10.1109/4.58299
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A monolithic charge-sensitive preamplifier based on n-channel junction field-effect transistors (JFET’s) and p-channel MOS has been realized for applications with multielectrode detectors in elementary particle physics. Radiation resistance tests carried out with the preamplifier exposed to γ-rays emitted by a 60Co source have shown no significant increase of the equivalent noise source up to 150-krd absorbed dose. © 1990 IEEE
引用
收藏
页码：1022 / 1024
页数：3
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