LONG-WAVELENGTH INASSB STRAINED-LAYER SUPERLATTICE PHOTOVOLTAIC INFRARED DETECTORS

被引：32
作者：
KURTZ, SR
DAWSON, LR
BIEFELD, RM
FRITZ, IJ
ZIPPERIAN, TE
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 04期
关键词：
D O I：
10.1109/55.31700
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：150 / 152
页数：3
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共 13 条
[1]   PHOTOCONDUCTANCE MEASUREMENTS ON INAS0.22SB0.78/GAAS GROWN USING MOLECULAR-BEAM EPITAXY [J].
BETHEA, CG ;
LEVINE, BF ;
YEN, MY ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1988, 53 (04) :291-292
[2]   STRAIN RELIEF IN COMPOSITIONALLY GRADED INASXSB1-X BUFFER LAYERS AND INASXSB1-X/INSB STRAINED-LAYER SUPERLATTICES GROWN BY MOCVD [J].
BIEFELD, RM ;
HILLS, CR ;
LEE, SR .
JOURNAL OF CRYSTAL GROWTH, 1988, 91 (04) :515-526
[3]  
BIEFELD RM, IN PRESS
[4]  
DAWSON LR, 1987, I PHYS C SER, V91, P525
[5]   PHOTOVOLTAIC QUANTUM WELL INFRARED DETECTOR [J].
GOOSSEN, KW ;
LYON, SA ;
ALAVI, K .
APPLIED PHYSICS LETTERS, 1988, 52 (20) :1701-1703
[6]  
KINGSTON RH, 1978, DETECTION OPTICAL IN
[7]   HIGH PHOTOCONDUCTIVE GAIN IN LATERAL INASSB STRAINED-LAYER SUPERLATTICE INFRARED DETECTORS [J].
KURTZ, SR ;
BIEFELD, RM ;
DAWSON, LR ;
FRITZ, IJ ;
ZIPPERIAN, TE .
APPLIED PHYSICS LETTERS, 1988, 53 (20) :1961-1963
[8]   DEMONSTRATION OF AN INASSB STRAINED-LAYER SUPERLATTICE PHOTODIODE [J].
KURTZ, SR ;
DAWSON, LR ;
ZIPPERIAN, TE ;
LEE, SR .
APPLIED PHYSICS LETTERS, 1988, 52 (19) :1581-1583
[9]   EXTENDED INFRARED RESPONSE OF INASSB STRAINED-LAYER SUPERLATTICES [J].
KURTZ, SR ;
OSBOURN, GC ;
BIEFELD, RM ;
DAWSON, LR ;
STEIN, HJ .
APPLIED PHYSICS LETTERS, 1988, 52 (10) :831-833
[10]   PHOTOLUMINESCENCE AND THE BAND-STRUCTURE OF INASSB STRAINED-LAYER SUPERLATTICES [J].
KURTZ, SR ;
OSBOURN, GC ;
BIEFELD, RM ;
LEE, SR .
APPLIED PHYSICS LETTERS, 1988, 53 (03) :216-218
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