DEFECT CHARACTERIZATION OF SI+-IMPLANTED GAAS BY MONOENERGETIC POSITRON BEAM TECHNIQUE

被引：0

作者：

LEE, JL ^{[1
]}

SHIM, KH ^{[1
]}

TANIGAWA, S ^{[1
]}

UEDONO, A ^{[1
]}

KIM, JS ^{[1
]}

PARK, HM ^{[1
]}

MA, DS ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST MAT SCI,SAKURA,IBARAKI 305,JAPAN

来源：

JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期

关键词：

D O I：

10.1051/jphyscol:1988497

中图分类号：

学科分类号：

摘要：

引用

页码：457 / 460

页数：4

共 13 条

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