WETTABILITY OF SIC, SI3N4 AND SIO2 WITH LIQUID CU-SI ALLOY

被引:0
|
作者
NOGI, K
机构
来源
TETSU TO HAGANE-JOURNAL OF THE IRON AND STEEL INSTITUTE OF JAPAN | 1986年 / 72卷 / 05期
关键词
D O I
暂无
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
引用
收藏
页码:S715 / S715
页数:1
相关论文
共 50 条
  • [21] Excess silicon at the Si3N4/SiO2 interface
    Gritsenko, VA
    Petrenko, IP
    Svitasheva, SN
    Wong, H
    APPLIED PHYSICS LETTERS, 1998, 72 (04) : 462 - 464
  • [22] Optical and electronic properties of Si3N4 and α-SiO2
    Kresse, G.
    Marsman, M.
    Hintzsche, L. E.
    Flage-Larsen, E.
    PHYSICAL REVIEW B, 2012, 85 (04):
  • [23] Nucleation of silicon on Si3N4 coated SiO2
    Brynjulfsen, I.
    Arnberg, L.
    JOURNAL OF CRYSTAL GROWTH, 2011, 331 (01) : 64 - 67
  • [24] Si/SiO2及Si/SiO2/Si3N4系统的总剂量辐射损伤
    范隆
    郝跃
    余学峰
    西安电子科技大学学报, 2003, (04) : 433 - 436
  • [26] THE DEGRADATION OF TDDB CHARACTERISTICS OF SIO2/SI3N4/SIO2 STACKED FILMS CAUSED BY SURFACE-ROUGHNESS OF SI3N4 FILMS
    TANAKA, H
    UCHIDA, H
    AJIOKA, T
    HIRASHITA, N
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (12) : 2231 - 2236
  • [27] Wettability of Carbon (C), Silicon Carbide (SiC), and Silicon Nitride (Si3N4) with Liquid Silicon (Si)
    Harish Iyer
    Yuchang Xiao
    Damian Durlik
    Karim Danaei
    Leili Tafaghodi Khajavi
    Mansoor Barati
    JOM, 2021, 73 : 244 - 252
  • [28] Si3N4结合SiC制品中SiO2含量的测定
    曹海洁
    梁献雷
    耐火材料, 2007, (03) : 236+240 - 236
  • [29] Structural characteristics of 3C-SiC films epitaxially grown on the Si/Si3N4/SiO2 system
    Zappe, S.
    Möller, H.
    Krötz, G.
    Eickhoff, M.
    Skorupa, W.
    Obermeier, E.
    Stoemenos, J.
    Materials Science Forum, 2000, 338
  • [30] Si3N4和Si3N4/SiO2驻极体薄膜的化学表面修正
    张晓青
    夏钟福
    潘永刚
    同济大学学报(自然科学版), 2000, (05) : 564 - 567