PYROMETRIC MEASUREMENT OF TEMPERATURE DURING CW ARGONION LASER ANNEALING AND THE SOLID-STATE REGROWTH RATE OF AMORPHOUS SI

被引：12

作者：

SEDGWICK, TO

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 03期

关键词：

D O I：

10.1063/1.92703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：254 / 256

页数：3

共 6 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[3]

GAT A, 1979, J APPL PHYS, V50, P2929

[4]

LAX M, 1979, LASER SOLID INTERACT, P149

[5] RAMAN MEASUREMENTS OF TEMPERATURE DURING CW LASER-HEATING OF SILICON [J].

LO, HW ;

COMPAAN, A .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1565-1568

[6] SOLID-PHASE EPITAXY OF IMPLANTED SILICON BY CW AR ION LASER IRRADIATION [J].

WILLIAMS, JS ;

BROWN, WL ;

LEAMY, HJ ;

POATE, JM ;

RODGERS, JW ;

ROUSSEAU, D ;

ROZGONYI, GA ;

SHELNUTT, JA ;

SHENG, TT .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :542-544

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