PYROMETRIC MEASUREMENT OF TEMPERATURE DURING CW ARGONION LASER ANNEALING AND THE SOLID-STATE REGROWTH RATE OF AMORPHOUS SI

被引：12
作者：
SEDGWICK, TO
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 03期
关键词：
D O I：
10.1063/1.92703
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：254 / 256
页数：3
相关论文
共 6 条
  • [1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON
    AUSTON, DH
    GOLOVCHENKO, JA
    SMITH, PR
    SURKO, CM
    VENKATESAN, TNC
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 539 - 541
  • [2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON
    CSEPREGI, L
    MAYER, JW
    SIGMON, TW
    [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93
  • [3] GAT A, 1979, J APPL PHYS, V50, P2929
  • [4] LAX M, 1979, LASER SOLID INTERACT, P149
  • [5] RAMAN MEASUREMENTS OF TEMPERATURE DURING CW LASER-HEATING OF SILICON
    LO, HW
    COMPAAN, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1565 - 1568
  • [6] SOLID-PHASE EPITAXY OF IMPLANTED SILICON BY CW AR ION LASER IRRADIATION
    WILLIAMS, JS
    BROWN, WL
    LEAMY, HJ
    POATE, JM
    RODGERS, JW
    ROUSSEAU, D
    ROZGONYI, GA
    SHELNUTT, JA
    SHENG, TT
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 542 - 544
1