ELECTRICAL-RESISTANCE OF NBSE3-SINGLE CRYSTALS UNDER UNIAXIAL PRESSURE

被引：2
作者：
CHASHKA, KB
BELETSKII, VI
OBOLENSKII, MA
机构：
[1] Department of Physics, Kharkov State University, Kharkov, 310077
来源：
PHYSICA B-CONDENSED MATTER | 1994年 / 203卷 / 1-2期
关键词：
D O I：
10.1016/0921-4526(94)90279-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The influence of uniaxial pressure along the a-axis on the resistivity along the b-axis of NbSe3 single crystals was investigated. The pressure increases the CDW-transition temperature to near 59 K and suppresses both Peierls gaps. The increase of the pressure leads to enhancement of the superconducting transition. The resistance behaviour of NbSe3-NbSe3 junctions at low pressure reconciles with the Anderson localization mechanism of conductivity.
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页码：75 / 80
页数：6
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