GAAS VAPOR-GROWN BIPOLAR TRANSISTORS

被引：10
作者：
NUESE, CJ
GOSSENBERGER, HF
ENSTROM, RE
DEAN, RH
GANNON, JJ
机构：
来源：
SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 01期
关键词：
D O I：
10.1016/0038-1101(72)90069-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：81 / +
页数：1
相关论文
共 27 条
[1]   DETECTION OF SELENIUM CLUSTERING IN GAAS BY TRANSMISSION ELECTRON MICROSCOPY [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ ;
TIETJEN, JJ .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :760-&
[2]  
ANTELL J, 1966, SEP P INT S I PHYS P
[3]   DOUBLE DIFFUSED GALLIUM ARSENIDE TRANSISTORS [J].
BECKE, H ;
FLATLEY, D ;
STOLNITZ, D .
SOLID-STATE ELECTRONICS, 1965, 8 (03) :255-&
[4]   HIGH-TEMPERATURE BEHAVIOR OF GAAS JUNCTIONS PREPARED BY DIFFERENT TECHNIQUES [J].
BEHRNDT, KH .
SOLID-STATE ELECTRONICS, 1971, 14 (03) :191-&
[5]  
BELASCO M, 1965, AF336152101 CONTR
[6]  
BERSON BE, 1970, RCA REV, V31, P20
[7]   REFINED STEP-RECOVERY TECHNIQUE FOR MEASURING MINORITY CARRIER LIFETIMES AND RELATED PARAMETERS IN ASYMMETRIC P-N JUNCTION DIODES [J].
DEAN, RH ;
NUESE, CJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (03) :151-&
[8]  
DISMUKES JP, 1969, NAS122091 CONTR
[9]  
DOERBECK FH, 1968, 2 P INT S GALL ARS I, P205
[10]  
ENSTROM RE, 1970, 3 P INT S GAAS REL C
123