ELECTRIC-FIELD EFFECT ON SUPERCONDUCTING YBA2CU3O7-DELTA FILMS

被引：5

作者：

MANNHART, J

SCHLOM, DG

BEDNORZ, JG

MULLER, KA

机构：

[1] IBM Research Division, Zurich Research Laboratory

来源：

PHYSICA C | 1991年 / 185卷

关键词：

D O I：

10.1016/0921-4534(91)90998-E

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MISFET-type structures have been developed that allow the application of electric fields larger than 4 x 10(6)V/cm into 100 angstrom thick, superconducting YBa2Cu3O7-delta channel layers. With these structures, the carrier density and the electrical resistivity of YBa2Cu3O7-delta can be modified in the percent range by gate voltages of 50 V.

引用

页码：1745 / 1746

页数：2

共 50 条

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