ELECTRIC-FIELD EFFECT ON SUPERCONDUCTING YBA2CU3O7-DELTA FILMS

被引：5
作者：
MANNHART, J
SCHLOM, DG
BEDNORZ, JG
MULLER, KA
机构：
[1] IBM Research Division, Zurich Research Laboratory
来源：
PHYSICA C | 1991年 / 185卷
关键词：
D O I：
10.1016/0921-4534(91)90998-E
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
MISFET-type structures have been developed that allow the application of electric fields larger than 4 x 10(6)V/cm into 100 angstrom thick, superconducting YBa2Cu3O7-delta channel layers. With these structures, the carrier density and the electrical resistivity of YBa2Cu3O7-delta can be modified in the percent range by gate voltages of 50 V.
引用
收藏
页码：1745 / 1746
页数：2
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