SEMICONDUCTING PROPERTIES OF ORIENTED THIN TELLURIUM-FILMS

Oriented tellurium films have been deposited on mica at temperatures ranging between 333K and 423 K. The electrical properties are measured. The results are discussed in relation to those resulting from electron microscopical and optical investigations. The existence of two acceptor states in the band gap is demonstrated, these states act as sources of holes below 400 K. On annealing the samples in situ, the electrical properties and the Hall coefficient imply considerable influence on the semi-conducting behaviour by electrons from the conduction band. I. R. spectral measurements have revealed the presence of three different peaks corresponding to three activation energy values of 0.05 eV, 0.12 eV and 0.31 eV. © 1979 with the authors.