EFFECT OF HEAT-TREATMENT ON CHEMICAL AND ELECTRONIC-STRUCTURE OF SOLID SIO - ELECTRON-SPECTROSCOPY STUDY

被引：72

作者：

HOLLINGER, G ^{[1
]}

JUGNET, Y ^{[1
]}

DUC, TM ^{[1
]}

机构：

[1] UNIV LYON 1,INST PHYS NUCL,F-69621 VILLEURBANNE,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 22卷 / 05期

关键词：

D O I：

10.1016/0038-1098(77)91430-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：277 / 280

页数：4

共 19 条

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[2]

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[3]

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COSTALIMA, MT ;

SENEMAUD, C .

CHEMICAL PHYSICS LETTERS, 1976, 40 (01) :157-159

[5] DISPROPORTIONATION AND VAPORIZATION OF SOLID SILICON MONOXIDE [J].

HERTL, W ;

PULTZ, WW .

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[6] X-RAY PHOTOELECTRON-SPECTROSCOPY OF THERMALLY GROWN SILICON DIOXIDE FILMS ON SILICON [J].

HOLLINGER, G ;

JUGNET, Y ;

PERTOSA, P ;

DUC, TM .

CHEMICAL PHYSICS LETTERS, 1975, 36 (04) :441-445

[7]

HOLLINGER G, 1976, J MICROSC SPECT ELEC, V1, P335

[8]

HOLLINGER G, 1974, TETRAHEDRALLY BONDED, P102

[9]

HOLLINGER G, TO BE PUBLISHED

[10]

HOWSON RP, 1971, THIN SOLID FILMS, V9, P109

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